SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME

SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME

A semiconductor memory device including a substrate including an active area defined by an element isolation layer, a bit line extending in a first direction on the substrate, a storage contact on each of both sides of the bit line and connected to the active area, a storage pad on the storage conta...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: KIM, Sung Gil, KIM, Beom Seo, NOH, Ji Hun
Format: Patent
Sprache:eng
Schlagworte:
ELECTRICITY
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Beschreibung
Zusammenfassung:A semiconductor memory device including a substrate including an active area defined by an element isolation layer, a bit line extending in a first direction on the substrate, a storage contact on each of both sides of the bit line and connected to the active area, a storage pad on the storage contact and connected to the storage contact and an information storage portion on the storage pad and connected to the storage pad, wherein the storage contact includes a lower storage contact and an upper storage contact on the lower storage contact, at least a portion of the lower storage contact is in the substrate, an entire upper surface of the lower storage contact is in contact with an entire lower surface of the upper storage contact, and each of the lower storage contact and the upper storage contact includes a semiconductor material may be provided.