SEMICONDUCTOR DEVICE AND METHOD OF FORMING P-TYPE NITRIDE SEMICONDUCTOR LAYER

SEMICONDUCTOR DEVICE AND METHOD OF FORMING P-TYPE NITRIDE SEMICONDUCTOR LAYER

A semiconductor device includes a p-type nitride semiconductor layer, the p-type nitride semiconductor layer including an Al-containing nitride semiconductor layer and an Al-containing compound layer containing Al and C as main constituent elements and provided on the surface of the Al-containing ni...

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Bibliographische Detailangaben
Hauptverfasser: KAWAKAMI, Yoichi, FUNATO, Mitsuru, OMAE, Kunimichi, KISHIMOTO, Katsuhiro
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A semiconductor device includes a p-type nitride semiconductor layer, the p-type nitride semiconductor layer including an Al-containing nitride semiconductor layer and an Al-containing compound layer containing Al and C as main constituent elements and provided on the surface of the Al-containing nitride semiconductor layer.