SEMICONDUCTOR DEVICE

A semiconductor device including a first oxide definition (OD) strip doped by a first-type dopant in a first doping region defining an active region of a first Metal-Oxide Semiconductor (MOS); a second OD strip doped by a second-type dopant in a second doping region and a third doping region, the se...

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Bibliographische Detailangaben
Hauptverfasser: ZHUANG, HUI-ZHONG, YANG, JUNGAN, CHEN, CHIH-LIANG, HUANG, CHENG-I, CHIANG, TING-WEI, YANG, KUO-NAN
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:A semiconductor device including a first oxide definition (OD) strip doped by a first-type dopant in a first doping region defining an active region of a first Metal-Oxide Semiconductor (MOS); a second OD strip doped by a second-type dopant in a second doping region and a third doping region, the second doping region defining an active region of a second MOS and the third doping region defining a body terminal of the first MOS, wherein the second OD is parallel to the first OD strip; and a first dummy OD strip, wherein a boundary between the second doping region and the third doping region is formed over the first dummy OD strip; wherein the first-type dopant is different from the second-type dopant.