SEMICONDUCTOR DEVICE

A memory device having large memory capacity is provided. A highly reliable memory device is provided. A semiconductor device includes a first conductive layer extending in a first direction, a structure body extending in a second direction intersecting with the first direction, a first insulating layer, and a second insulating layer. The structure body includes a functional layer, a semiconductor layer, a third insulating layer, and a second conductive layer. In an intersection portion of the first conductive layer and the structure body, the third insulating layer, the semiconductor layer, and the functional layer are placed concentrically around the second conductive layer in this order. The first insulating layer and the second insulating layer are stacked in the second direction. The functional layer and the first conductive layer are placed between the first insulating layer and the second insulating layer. The second conductive layer, the third insulating layer, and the semiconductor layer include a portion positioned inside a first opening provided in the first insulating layer and a portion positioned inside a second opening provided in the second insulating layer.