RUGGED LDMOS WITH FIELD PLATE

A microelectronic device including a substrate having a semiconductor material containing a laterally diffused metal oxide semiconductor (LDMOS) transistor, including a body region of a first conductivity type and a drift region of an opposite conductivity type. A gate dielectric layer over a channe...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Sadovnikov, Alexei, Edwards, Henry Litzmann, Naquin, Clint Alan
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
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