RUGGED LDMOS WITH FIELD PLATE

A microelectronic device including a substrate having a semiconductor material containing a laterally diffused metal oxide semiconductor (LDMOS) transistor, including a body region of a first conductivity type and a drift region of an opposite conductivity type. A gate dielectric layer over a channel region of the body, the gate dielectric extending over a junction between a body region and the drift region with a gate electrode on the gate dielectric and a drain contact in the drain drift region, having the second conductivity type. A field relief dielectric layer on the drain drift region extending from the drain region to the gate dielectric, having a thickness greater than the gate dielectric layer. A silicide-blocking layer extends from the drain region toward the gate, providing an unsilicided portion of the drift region at the substrate top surface between the drain region and the gate.