PHOTODIODE AND FABRICATION METHOD OF A PHOTODIODE

A photodiode is formed in a semiconductor substrate having a first surface and a second surface. The semiconductor substrate includes a first N-type semiconductor region formed by epitaxial growth and a second N-type semiconductor region (that is more heavily doped than the first region) extending i...

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Bibliographische Detailangaben
Hauptverfasser:	RODRIGUES GONCALVES, Boris, FONTENEAU, Pascal
Format:	Patent
Sprache:	eng
Schlagworte:	ANALOGOUS ARRANGEMENTS USING OTHER WAVES BASIC ELECTRIC ELEMENTS DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION ORRERADIATION OF RADIO WAVES MEASURING PHYSICS RADIO DIRECTION-FINDING RADIO NAVIGATION SEMICONDUCTOR DEVICES TESTING
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Beschreibung
Zusammenfassung:	A photodiode is formed in a semiconductor substrate having a first surface and a second surface. The semiconductor substrate includes a first N-type semiconductor region formed by epitaxial growth and a second N-type semiconductor region (that is more heavily doped than the first region) extending into the first N-type semiconductor region from the first surface. The dopant concentration of the first N-type semiconductor region gradually increases between the second surface and the first surface of the semiconductor substrate. An implanted heavily P-type doped region is formed in the second N-type semiconductor region at the first surface.