SEMICONDUCTOR DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME

A semiconductor device includes a first semiconductor structure including a lower bonding structure, and a second semiconductor structure including a second substrate disposed on the first semiconductor structure, gate electrodes stacked and spaced apart from each other in a first direction perpendi...

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Bibliographische Detailangaben
Hauptverfasser: CHOI, Moorym, JANG, Yunsun, SUNG, Jungtae
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:A semiconductor device includes a first semiconductor structure including a lower bonding structure, and a second semiconductor structure including a second substrate disposed on the first semiconductor structure, gate electrodes stacked and spaced apart from each other in a first direction perpendicular to a lower surface of the second substrate, an upper bonding structure bonded to the lower bonding structure, a plate conductive layer disposed on an upper surface of the second substrate, electrically connected to a channel layer, and including a metal material, and an isolation structure penetrating an entirety of the gate electrodes and extending in a second direction perpendicular to the first direction. The isolation structure includes a vertical conductive layer that extends from and is integrated with the plate conductive layer, and that includes a same metal material as the metal material of the plate conductive layer.