ETCHING APPARATUS AND METHOD

A method includes forming an inner chamber in a process chamber of a plasma processing apparatus, the inner chamber having smaller volume than the process chamber. At least one gas is introduced into the inner chamber, and flow of the at least one gas into the inner chamber is measured. The flow of...

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Bibliographische Detailangaben
Hauptverfasser:	JEN, Yung-Chang, TSENG, Tsung-Yi, LIAO, Chih-Teng, CHEN, Shao Yong, LIAO, Bo-Ting, CHEN, Hsi Chung
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	A method includes forming an inner chamber in a process chamber of a plasma processing apparatus, the inner chamber having smaller volume than the process chamber. At least one gas is introduced into the inner chamber, and flow of the at least one gas into the inner chamber is measured. The flow of the at least one gas is adjusted to a desired rate, and a wafer is processed by the at least one gas at the desired rate while the inner chamber is not formed.