PLASMA PROCESSING APPARATUS

According to an aspect of the inventive concept, there is provided a plasma processing apparatus including a housing including a space accommodating a wafer therein, a gas supply member configured to supply gas into the housing, a plasma source generating a plasma from the gas supplied into the hous...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: SHIN, Jaewon, SON, Dukhyun, KIM, Hyungjoon
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:According to an aspect of the inventive concept, there is provided a plasma processing apparatus including a housing including a space accommodating a wafer therein, a gas supply member configured to supply gas into the housing, a plasma source generating a plasma from the gas supplied into the housing, and a magnetic field generating member disposed on the housing and configured to generate a magnetic field inside the housing, wherein the magnetic field generating member includes a first magnet unit disposed on the housing, and a second magnet unit disposed on the first magnet unit, wherein the second magnet unit is rotatable to change the magnetic pole of the upper portion and lower portion of the second magnet unit.