MULTILAYER JUNCTION PHOTOELECTRIC CONVERSION ELEMENT AND METHOD FOR MANUFACTURING THE SAME

The present embodiment provides a semiconductor element that can generate power with high efficiency and has high durability.A multilayer junction photoelectric conversion element according to an embodiment comrises:a first electrode;a first photoactive layer including a perovskite semiconductor;a first passivation layer;a first doped layer;a second photoactive layer containing silicon; anda second electrode, in this order. The multilayer junction photoelectric conversion element further comprises a light scattering layer including a plurality of mutually separated silicon alloy layers that penetrate a part of the passivation layer and electrically connect the first photoactive layer and the first doped layer. The element can be manufactured by a method including forming a bottom cell including a second active layer and then forming a first photoactive layer by coating.