VERTICAL ORIENTED SEMICONDUCTOR DEVICE HAVING A REDUCED LATERAL FIELD TERMINATION DISTANCE, AS WELL AS A CORRESPONDING METHOD

A vertical oriented semiconductor device is provided that includes a semiconductor body having a first major surface, the semiconductor body includes a first region of a first conductivity type, a second region of a second conductivity type, and the second region is adjacent the first region so that a junction is provided between the first region and the second region. The junction has a maximum distance to the first major surface, and the semiconductor device further includes a trench extending into the semiconductor body from the first major surface to an extension depth at least equal to the maximum distance. The trench includes a material arranged to provide electrical insulation to limit a lateral field termination distance associated with the junction.