SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING A SEMICONDUCTOR DEVICE

In an embodiment, a semiconductor device includes a vertical power FET for switching a load current, the power FET including a channel region of a first conductivity type and a first lateral FET and a second lateral FET providing an output stage of gate driver circuitry for driving the power FET. Th...

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Bibliographische Detailangaben
Hauptverfasser: Henson, Timothy, He, Honghai, Mirchandani, Ashita, Naik, Harsh, Haase, Robert
Format: Patent
Sprache:eng
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