SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING A SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING A SEMICONDUCTOR DEVICE

In an embodiment, a semiconductor device includes a vertical power FET for switching a load current, the power FET including a channel region of a first conductivity type and a first lateral FET and a second lateral FET providing an output stage of gate driver circuitry for driving the power FET. Th...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Henson, Timothy, He, Honghai, Mirchandani, Ashita, Naik, Harsh, Haase, Robert
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
BASIC ELECTRONIC CIRCUITRY
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
PULSE TECHNIQUE
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:In an embodiment, a semiconductor device includes a vertical power FET for switching a load current, the power FET including a channel region of a first conductivity type and a first lateral FET and a second lateral FET providing an output stage of gate driver circuitry for driving the power FET. The first lateral FET includes a channel region of the first conductivity type and the second lateral FET includes a channel region of a second conductivity type opposing the first conductivity type. The power FET and the first and second lateral FETs are monolithically integrated into a semiconductor substrate of the first conductivity type and that has a first surface. A drain of the first lateral FET and a source of the second lateral FET are electrically coupled to a gate of the power FET.