EUV PHOTO MASKS AND MANUFACTURING METHOD THEREOF

EUV PHOTO MASKS AND MANUFACTURING METHOD THEREOF

A photo mask for an extreme ultraviolet (EUV) lithography includes a mask alignment mark for aligning the photo mask to an EUV lithography tool, and sub-resolution assist patterns disposed around the mask alignment mark. A dimension of the sub-resolution assist patterns is in a range from 10 nm to 5...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: WANG, Sheng-Min, LAI, Yu-Tse, SU, Wei-Shuo, HSIEH, Ken-Hsien, CHANG, Ya Hui, CHENG, Chieh-Jen
Format: Patent
Sprache:eng
Schlagworte:
APPARATUS SPECIALLY ADAPTED THEREFOR
CINEMATOGRAPHY
ELECTROGRAPHY
HOLOGRAPHY
MATERIALS THEREFOR
ORIGINALS THEREFOR
PHOTOGRAPHY
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES
PHYSICS
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Beschreibung
Zusammenfassung:A photo mask for an extreme ultraviolet (EUV) lithography includes a mask alignment mark for aligning the photo mask to an EUV lithography tool, and sub-resolution assist patterns disposed around the mask alignment mark. A dimension of the sub-resolution assist patterns is in a range from 10 nm to 50 nm.