COMPOSITION FOR DEPOSITING A SILICON-CONTAINING LAYER AND METHOD OF DEPOSITING A SILICON-CONTAINING LAYER USING THE SAME
Provided is a precursor for depositing a silicon-containing layer, the silicon precursor having a heterocyclic group, and a method of depositing a silicon-containing layer using the same. The silicon precursor is represented by Formula 1.In Formula 1, A1 is a heterocyclic group including one or more...
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Zusammenfassung: | Provided is a precursor for depositing a silicon-containing layer, the silicon precursor having a heterocyclic group, and a method of depositing a silicon-containing layer using the same. The silicon precursor is represented by Formula 1.In Formula 1, A1 is a heterocyclic group including one or more nitrogen, and R1 is hydrogen or an alkyl group of 1˜6 carbon atoms. R2 may be an alkyl group of 1˜6 carbon atoms. R3 may be an alkyl group of 1˜6 carbon atoms. |
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