OXIDE ELECTRODE-BASED 3-TERMINAL NEUROMORPHIC SYNAPTIC DEVICE CONTAINING MOBILE IONS, AND METHOD OF MANUFACTURING THE SAME

Disclosed is a 3-terminal neuromorphic synaptic device including a substrate, a source electrode and a drain electrode provided on the substrate to be spaced apart from each other, a channel area provided on the substrate to be electrically connected to the source electrode and the drain electrode,...

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Bibliographische Detailangaben
Hauptverfasser: Woo, Jiyong, Kang, Heebum
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:Disclosed is a 3-terminal neuromorphic synaptic device including a substrate, a source electrode and a drain electrode provided on the substrate to be spaced apart from each other, a channel area provided on the substrate to be electrically connected to the source electrode and the drain electrode, between the source electrode and the drain electrode, an ion transport layer provided on the channel area, a gate electrode provided on the ion transport layer, and a voltage application part that applies a gate voltage to the gate electrode. The gate electrode is formed of at least one of an oxide-based material including mobile ions, a chalcogenide-based material including the mobile ions, and a nitride-based material including the mobile ions.