SEMICONDUCTOR MEMORY DEVICE

A method of controlling a memory device includes receiving a write instruction; starting a write operation to a first address in response to the write instruction; receiving a first read instruction of the first address; suspending the write operation; and applying a read voltage to a word line corresponding to the first address in a first read operation in response to the first read instruction. The method further includes resuming the write operation is after applying the read voltage; receiving a second read instruction after applying the read voltage; and outputting read data from a data register in response to the second read instruction during a period starting at resuming the write operation and ending at completion of the write operation.