METHOD FOR PRODUCING A SIC SUPERJUNCTION DEVICE

Disclosed is a method that includes: measuring at least one characteristic of a superjunction region of a SiC superjunction device, wherein the superjunction region is arranged in a semiconductor body and comprises a plurality of first regions of a first doping type and a plurality of second regions of a second doping type complementary to the first doping type; and generating dopant like defects of one doping type in the superjunction region in a doping process. At least one parameter of the doping process is adjusted dependent on the at least one measured characteristic. The doping process includes an implantation process in which particles are implanted into the semiconductor body to form crystal defects in the semiconductor body in the superjunction region, and an annealing process in order to form the dopant like defects based on the crystal defects.