STACKED TRANSISTOR STRUCTURE WITH REFLECTION LAYER

STACKED TRANSISTOR STRUCTURE WITH REFLECTION LAYER

A semiconductor device is provided and includes a first substrate including a first transistor; a laser reflection layer on the first transistor; and a second substrate on the laser reflection layer, the second substrate including a second transistor.

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Bibliographische Detailangaben
Hauptverfasser: Wu, Teresa J, Wang, Junli, Yamashita, Tenko, Wu, Heng
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A semiconductor device is provided and includes a first substrate including a first transistor; a laser reflection layer on the first transistor; and a second substrate on the laser reflection layer, the second substrate including a second transistor.