ELECTRON EXTRACTION TYPE FREE-WHEELING DIODE DEVICE AND PREPARATION METHOD THEREOF

An electron extraction type free-wheeling diode device and a preparation method thereof are provided by the present disclosure, and more than one first structures for increasing the density of electron extraction pathways are provided on a N-type drift region. Each of the first structures includes a lightly doped P-type base region, a heavily doped N-type emitter region located on the lightly doped P-type base region, a P-type trench anode region, and a trench region located on the P-type trench anode region. The barrier height of the punch-through NPN triode can be tuned in a wide range, which has beneficial effects on soft and fast adjustment of the reverse recovery process.