Dual Gate Power Semiconductor Device and Method of Controlling a Dual Gate Power Semiconductor Device

A dual gate IGBT is presented, where the active region includes a first section and a second section. Both sections may be controlled by two control signals. For example, the first section exhibits a first characteristic transfer curve, load current in dependence of the voltage of the first control signal, and the second section exhibits a second characteristic transfer curve, load current in dependence of the voltage of the first control signal. At least the second characteristic transfer curves are changeable based on the voltage of the second control signal. For a given voltage of the first control signal corresponding to a forward-conduction-state of the power semiconductor device, the change of load current in the first section observed for a given change of the voltage of the second control signal is smaller as compared to the corresponding change of the load current in the second section.