TEMPERATURE CONTROL SYSTEM FOR LIQUID SOURCES

A reactor system for use in semiconductor processing that makes use of a liquid source for deposition that needs to be maintained within a specific temperature control band or range. The reactor system includes a temperature control system that includes a heating and cooling apparatus for providing...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	Sharma, Pawan, Biyani, Sudhanshu, Kimtee, Ankit
Format:	Patent
Sprache:	eng
Schlagworte:	CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	A reactor system for use in semiconductor processing that makes use of a liquid source for deposition that needs to be maintained within a specific temperature control band or range. The reactor system includes a temperature control system that includes a heating and cooling apparatus for providing both heating and cooling of a vessel that stores the liquid source to maintain the liquid source within a desired temperature control band or range. In this manner, the heating and cooling apparatus may be used in a reactor system in which the vessel needs to be cooled, needs to be heated, or uses concurrent or alternating heating and cooling to provide enhanced control of the source temperature within a particular temperature control band.