ALUMINUM PRECURSOR, METHOD OF FORMING A THIN LAYER USING THE SAME, METHOD OF MANUFACTURING THE SAME, AND METHOD OF MANUFACTURING MEMORY DEVICE

Disclosed is a method for manufacturing an aluminum precursor formed by mixing 1 to 3 moles of a compound represented by the following Chemical Formula 1 or following Chemical Formula 2 and 1 to 3 moles of a compound represented by the following Chemical Formula 3.wherein X is O or S, and R1 or R2 i...

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Hauptverfasser: CHO, Hyeon Sik, CHO, Kyu Ho, KIM, Jae Min, KIM, Ha Na, JUNG, Hyun Ju, JEONG, Ju Hwan, SEO, Duck Hyeon, KIM, Myeong Il, HAN, Ji Yeon
Format: Patent
Sprache:eng
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Zusammenfassung:Disclosed is a method for manufacturing an aluminum precursor formed by mixing 1 to 3 moles of a compound represented by the following Chemical Formula 1 or following Chemical Formula 2 and 1 to 3 moles of a compound represented by the following Chemical Formula 3.wherein X is O or S, and R1 or R2 is each independently selected from an alkyl group having 1 to 8 carbon atoms, a cycloalkyl group having 3 to 6 carbon atoms, and an aryl group having 6 to 12 carbon atoms.wherein X is O or S, n is 1 to 5, and R1 to R4 are each independently selected from a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, a cycloalkyl group having 3 to 6 carbon atoms, and an aryl group having 6 to 12 carbon atoms.wherein R1, R2 and R3 are different from each other, and each independently selected from a hydrogen atom, an alkyl group having 1 to 6 carbon atoms, a dialkylamine having 1 to 6 carbon atoms, a cycloamine group having 1 to 6 carbon atoms, or a halogen atom.