SEMICONDUCTOR DEVICE

A semiconductor device includes: a plurality of first interconnections extending in a first direction and spaced from one another in a second direction crossing the first direction; a channel adjacent to the first interconnections in a third direction crossing the first direction and the second direction and extending in the second direction; and a plurality of first charge storage sections, each of the first charge storage sections provided between a corresponding one of the first interconnections and the channel. The first interconnections each include a first portion relatively farther from the channel and a second portion relatively closer to the channel, wherein the first portion includes a first thickness in the second direction and the second portion includes a second thickness in the second direction, and wherein the second thickness is substantially greater than the first thickness.