PJ JUNCTION DEVICE STRUCTURE IN SEMICONDUCTOR DEVICE WITH BACK SIDE POWER DELIVERY NETWORK (BSPDN) STRUCTURE

PJ JUNCTION DEVICE STRUCTURE IN SEMICONDUCTOR DEVICE WITH BACK SIDE POWER DELIVERY NETWORK (BSPDN) STRUCTURE

Provided is a semiconductor device that includes: at least one field-effect transistor and at least one PN junction device at a lateral side of the at least one field-effect transistor in a 1st layer; and at least one back side power delivery network (BSPDN) structure in a 2nd layer below the 1st la...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: HONG, Byounghak, PARK, Sooyoung, SEO, Kang-ill
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:Provided is a semiconductor device that includes: at least one field-effect transistor and at least one PN junction device at a lateral side of the at least one field-effect transistor in a 1st layer; and at least one back side power delivery network (BSPDN) structure in a 2nd layer below the 1st layer, wherein the at least one BSPDN structure is configured to connect the at least one field-effect transistor to a voltage source.