EMBEDDED MRAM FABRICATION PROCESS FOR ION BEAM ETCHING WITH PROTECTION BY TOP ELECTRODE SPACER

EMBEDDED MRAM FABRICATION PROCESS FOR ION BEAM ETCHING WITH PROTECTION BY TOP ELECTRODE SPACER

An integrated circuit die includes a magnetic tunnel junction as a storage element of a MRAM cell. The integrated circuit die includes a top electrode positioned on the magnetic tunnel junction. The integrated circuit die includes a first sidewall spacer laterally surrounding the top electrode. The...

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Bibliographische Detailangaben
Hauptverfasser: CHUANG, Harry-Hak-Lay, CHEN, Jun-Yao, WANG, Hung Cho
Format: Patent
Sprache:eng
Schlagworte:
ELECTRICITY
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Beschreibung
Zusammenfassung:An integrated circuit die includes a magnetic tunnel junction as a storage element of a MRAM cell. The integrated circuit die includes a top electrode positioned on the magnetic tunnel junction. The integrated circuit die includes a first sidewall spacer laterally surrounding the top electrode. The first sidewall spacer acts as a mask for patterning the magnetic tunnel junction. The integrated circuit die includes a second sidewalls spacer positioned on a lateral surface of the magnetic tunnel junction.