GATE ALL AROUND BACKSIDE POWER RAIL WITH DIFFUSION BREAK

GATE ALL AROUND BACKSIDE POWER RAIL WITH DIFFUSION BREAK

Semiconductor devices and methods of manufacturing the same are described. The method includes forming a diffusion break opening on the backside and filling with a diffusion break material to serve as a planarization stop. In some embodiments, a single diffusion break opening is formed. In other emb...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Yeoh, Andrew, Pranatharthiharan, Balasubramanian, Bazizi, El Mehdi, Pal, Ashish, Colombeau, Benjamin
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:Semiconductor devices and methods of manufacturing the same are described. The method includes forming a diffusion break opening on the backside and filling with a diffusion break material to serve as a planarization stop. In some embodiments, a single diffusion break opening is formed. In other embodiments, a mixed diffusion break opening is formed.