IMAGE SENSORS

An image sensor is provided. The image sensor includes: a semiconductor substrate including a photoelectric conversion region; a buried transmission gate electrode provided in a transmission gate trench; a fin-type active region provided between a first trench and a second trench which extend into the semiconductor substrate, wherein the fin-type active region includes a first source/drain region, a second source/drain region, and a channel region provided between the first and second source/drain regions; and a first gate electrode covering a top surface and both sidewalls of the fin-type active region, and inner walls of the first trench and the second trench. The channel region, the first source/drain region and the second source/drain region each have a first conductivity type. The photoelectric conversion region and the fin-type active region overlap along a vertical direction.