SELECTIVE DEPOSITION USING GRAPHENE AS AN INHIBITOR

Graphene is selectively deposited on a metal layer relative to a dielectric layer of a semiconductor substrate. Dielectric material is selectively deposited on the dielectric layer relative to the metal layer of the semiconductor substrate. The graphene is a high-quality graphene film that serves as...

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Bibliographische Detailangaben
Hauptverfasser: NARKEVICIUTE, Ieva, VARADARAJAN, Bhadri N, SHARMA, Kashish
Format: Patent
Sprache:eng
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Zusammenfassung:Graphene is selectively deposited on a metal layer relative to a dielectric layer of a semiconductor substrate. Dielectric material is selectively deposited on the dielectric layer relative to the metal layer of the semiconductor substrate. The graphene is a high-quality graphene film that serves as an inhibitor during deposition of the dielectric material. In some implementations, the dielectric material may be a metal oxide. In some implementations, the dielectric material may be a low-k dielectric material. The graphene remains throughout semiconductor integration processes. In some implementations, the graphene may be subsequently modified by to permit deposition on the surface of the graphene or the graphene may be subsequently removed.