PROCESS CHAMBER PROCESS KIT WITH PROTECTIVE COATING

Embodiments described herein generally relate to a method and apparatus for fabricating a chamber component for a plasma process chamber. In one embodiment a chamber component used within a plasma processing chamber is provided that includes a metallic base material comprising a roughened non-planar...

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Bibliographische Detailangaben
Hauptverfasser:	WANG, Linlin, BEVAN, Malcolm, HAWRYLCHAK, Lara, GUARINI, Theresa Kramer, WU, Jian, LIU, Wei
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	Embodiments described herein generally relate to a method and apparatus for fabricating a chamber component for a plasma process chamber. In one embodiment a chamber component used within a plasma processing chamber is provided that includes a metallic base material comprising a roughened non-planar first surface, wherein the roughened non-planar surface has an Ra surface roughness of between 4 micro-inches and 80 micro-inches, a planar silica coating formed over the roughened non-planar surface, wherein the planar silica coating has a surface that has an Ra surface roughness that is less than the Ra surface roughness of the roughened non-planar surface, a thickness between about 0.2 microns and about 10 microns, less than 1% porosity by volume, and contains less than 2E12 atoms/centimeters2 of aluminum.