GaAs INGOT AND METHOD OF PRODUCING GaAs INGOT, AND GaAs WAFER
Provided is a GaAs ingot with which a GaAs wafer having a carrier concentration of 5.5×1017 cm−3 or less and low dislocation density with an average dislocation density of 500/cm2 or less can be obtained by adding a small amount of In with Si. A seed side end and a center portion of a straight body...
Gespeichert in:
| Hauptverfasser: | , , |
|---|---|
| Format: | Patent |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | |
| container_start_page | |
| container_title | |
| container_volume | |
| creator | AKAISHI, Akira SUNACHI, Naoya TOBA, Ryuichi |
| description | Provided is a GaAs ingot with which a GaAs wafer having a carrier concentration of 5.5×1017 cm−3 or less and low dislocation density with an average dislocation density of 500/cm2 or less can be obtained by adding a small amount of In with Si. A seed side end and a center portion of a straight body part of the GaAs ingot each have a silicon concentration of 2.0×1017 cm−3 or more and less than 1.5×1018 cm−3, an indium concentration of 1.0×1017cm−3 or more and less than 6.5×1018 cm−3, a carrier concentration of 5.5×1017 cm−3 or less, and an average dislocation density of 500/cm2 or less. |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US2023243067A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US2023243067A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US2023243067A13</originalsourceid><addsrcrecordid>eNrjZLB1T3QsVvD0c_cPUXD0c1HwdQ3x8HdR8HdTCAjydwl1BsooIJTogNWA-eGObq5BPAysaYk5xam8UJqbQdnNNcTZQze1ID8-tbggMTk1L7UkPjTYyMDI2MjE2MDM3NHQmDhVAM_BKrA</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>GaAs INGOT AND METHOD OF PRODUCING GaAs INGOT, AND GaAs WAFER</title><source>esp@cenet</source><creator>AKAISHI, Akira ; SUNACHI, Naoya ; TOBA, Ryuichi</creator><creatorcontrib>AKAISHI, Akira ; SUNACHI, Naoya ; TOBA, Ryuichi</creatorcontrib><description>Provided is a GaAs ingot with which a GaAs wafer having a carrier concentration of 5.5×1017 cm−3 or less and low dislocation density with an average dislocation density of 500/cm2 or less can be obtained by adding a small amount of In with Si. A seed side end and a center portion of a straight body part of the GaAs ingot each have a silicon concentration of 2.0×1017 cm−3 or more and less than 1.5×1018 cm−3, an indium concentration of 1.0×1017cm−3 or more and less than 6.5×1018 cm−3, a carrier concentration of 5.5×1017 cm−3 or less, and an average dislocation density of 500/cm2 or less.</description><language>eng</language><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE ; APPARATUS THEREFOR ; CHEMISTRY ; CRYSTAL GROWTH ; METALLURGY ; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; REFINING BY ZONE-MELTING OF MATERIAL ; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; SINGLE-CRYSTAL-GROWTH ; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><creationdate>2023</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20230803&DB=EPODOC&CC=US&NR=2023243067A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20230803&DB=EPODOC&CC=US&NR=2023243067A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>AKAISHI, Akira</creatorcontrib><creatorcontrib>SUNACHI, Naoya</creatorcontrib><creatorcontrib>TOBA, Ryuichi</creatorcontrib><title>GaAs INGOT AND METHOD OF PRODUCING GaAs INGOT, AND GaAs WAFER</title><description>Provided is a GaAs ingot with which a GaAs wafer having a carrier concentration of 5.5×1017 cm−3 or less and low dislocation density with an average dislocation density of 500/cm2 or less can be obtained by adding a small amount of In with Si. A seed side end and a center portion of a straight body part of the GaAs ingot each have a silicon concentration of 2.0×1017 cm−3 or more and less than 1.5×1018 cm−3, an indium concentration of 1.0×1017cm−3 or more and less than 6.5×1018 cm−3, a carrier concentration of 5.5×1017 cm−3 or less, and an average dislocation density of 500/cm2 or less.</description><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</subject><subject>APPARATUS THEREFOR</subject><subject>CHEMISTRY</subject><subject>CRYSTAL GROWTH</subject><subject>METALLURGY</subject><subject>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>REFINING BY ZONE-MELTING OF MATERIAL</subject><subject>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>SINGLE-CRYSTAL-GROWTH</subject><subject>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2023</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZLB1T3QsVvD0c_cPUXD0c1HwdQ3x8HdR8HdTCAjydwl1BsooIJTogNWA-eGObq5BPAysaYk5xam8UJqbQdnNNcTZQze1ID8-tbggMTk1L7UkPjTYyMDI2MjE2MDM3NHQmDhVAM_BKrA</recordid><startdate>20230803</startdate><enddate>20230803</enddate><creator>AKAISHI, Akira</creator><creator>SUNACHI, Naoya</creator><creator>TOBA, Ryuichi</creator><scope>EVB</scope></search><sort><creationdate>20230803</creationdate><title>GaAs INGOT AND METHOD OF PRODUCING GaAs INGOT, AND GaAs WAFER</title><author>AKAISHI, Akira ; SUNACHI, Naoya ; TOBA, Ryuichi</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2023243067A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2023</creationdate><topic>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</topic><topic>APPARATUS THEREFOR</topic><topic>CHEMISTRY</topic><topic>CRYSTAL GROWTH</topic><topic>METALLURGY</topic><topic>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>REFINING BY ZONE-MELTING OF MATERIAL</topic><topic>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>SINGLE-CRYSTAL-GROWTH</topic><topic>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</topic><toplevel>online_resources</toplevel><creatorcontrib>AKAISHI, Akira</creatorcontrib><creatorcontrib>SUNACHI, Naoya</creatorcontrib><creatorcontrib>TOBA, Ryuichi</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>AKAISHI, Akira</au><au>SUNACHI, Naoya</au><au>TOBA, Ryuichi</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>GaAs INGOT AND METHOD OF PRODUCING GaAs INGOT, AND GaAs WAFER</title><date>2023-08-03</date><risdate>2023</risdate><abstract>Provided is a GaAs ingot with which a GaAs wafer having a carrier concentration of 5.5×1017 cm−3 or less and low dislocation density with an average dislocation density of 500/cm2 or less can be obtained by adding a small amount of In with Si. A seed side end and a center portion of a straight body part of the GaAs ingot each have a silicon concentration of 2.0×1017 cm−3 or more and less than 1.5×1018 cm−3, an indium concentration of 1.0×1017cm−3 or more and less than 6.5×1018 cm−3, a carrier concentration of 5.5×1017 cm−3 or less, and an average dislocation density of 500/cm2 or less.</abstract><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | |
| ispartof | |
| issn | |
| language | eng |
| recordid | cdi_epo_espacenet_US2023243067A1 |
| source | esp@cenet |
| subjects | AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CRYSTAL GROWTH METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL |
| title | GaAs INGOT AND METHOD OF PRODUCING GaAs INGOT, AND GaAs WAFER |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-06T07%3A27%3A13IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=AKAISHI,%20Akira&rft.date=2023-08-03&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS2023243067A1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |