GaAs INGOT AND METHOD OF PRODUCING GaAs INGOT, AND GaAs WAFER

GaAs INGOT AND METHOD OF PRODUCING GaAs INGOT, AND GaAs WAFER

Provided is a GaAs ingot with which a GaAs wafer having a carrier concentration of 5.5×1017 cm−3 or less and low dislocation density with an average dislocation density of 500/cm2 or less can be obtained by adding a small amount of In with Si. A seed side end and a center portion of a straight body...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: AKAISHI, Akira, SUNACHI, Naoya, TOBA, Ryuichi
Format: Patent
Sprache:eng
Schlagworte:
AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE
APPARATUS THEREFOR
CHEMISTRY
CRYSTAL GROWTH
METALLURGY
PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
REFINING BY ZONE-MELTING OF MATERIAL
SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
SINGLE-CRYSTAL-GROWTH
UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Zusammenfassung:Provided is a GaAs ingot with which a GaAs wafer having a carrier concentration of 5.5×1017 cm−3 or less and low dislocation density with an average dislocation density of 500/cm2 or less can be obtained by adding a small amount of In with Si. A seed side end and a center portion of a straight body part of the GaAs ingot each have a silicon concentration of 2.0×1017 cm−3 or more and less than 1.5×1018 cm−3, an indium concentration of 1.0×1017cm−3 or more and less than 6.5×1018 cm−3, a carrier concentration of 5.5×1017 cm−3 or less, and an average dislocation density of 500/cm2 or less.