RESISTIVE MEMORY CELL HAVING AN OVONIC THRESHOLD SWITCH

RESISTIVE MEMORY CELL HAVING AN OVONIC THRESHOLD SWITCH

The disclosure concerns a resistive memory cell, including a stack of a selector, of a resistive element, and of a layer of phase-change material, the selector having no physical contact with the phase-change material. In one embodiment, the selector is an ovonic threshold switch formed on a conduct...

Ausführliche Beschreibung

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Bibliographische Detailangaben
1. Verfasser: BOIVIN, Philippe
Format: Patent
Sprache:eng
Schlagworte:
ELECTRICITY
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Beschreibung
Zusammenfassung:The disclosure concerns a resistive memory cell, including a stack of a selector, of a resistive element, and of a layer of phase-change material, the selector having no physical contact with the phase-change material. In one embodiment, the selector is an ovonic threshold switch formed on a conductive track of a metallization level.