METHOD OF MANUFACTURING MEMORY DEVICE HAVING MEMORY CELL WITH REDUCED PROTRUSION

The present application provides a method of manufacturing a memory device. The method includes steps of providing a semiconductor substrate having a fin portion protruding from a surface of the semiconductor substrate; disposing a semiconductive material over the semiconductor substrate and conformal to the fin portion; disposing a conductive material over the semiconductive material; disposing an insulating material over the conductive material; disposing a patterned photoresist over the insulating material; applying an electric field at a first predetermined angle toward a plasma to remove a portion of the insulating material exposed through the patterned photoresist to form an insulating layer, to remove a portion of the conductive material under the portion of the insulating material to form a conductive layer, and to remove a portion of the semiconductive material under the portion of the insulating material to form a semiconductive layer; and removing the patterned photoresist from the insulating layer.