SILICON CARBIDE SEMICONDUCTOR DEVICE

SILICON CARBIDE SEMICONDUCTOR DEVICE

A silicon carbide semiconductor device includes a semiconductor substrate, a first semiconductor layer, a second semiconductor layer, a first semiconductor region, and a gate electrode. Protons are implanted in a first region spanning a predetermined distance from a surface of the semiconductor subs...

Ausführliche Beschreibung

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Bibliographische Detailangaben
1. Verfasser: FUJIMOTO, Takumi
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A silicon carbide semiconductor device includes a semiconductor substrate, a first semiconductor layer, a second semiconductor layer, a first semiconductor region, and a gate electrode. Protons are implanted in a first region spanning a predetermined distance from a surface of the semiconductor substrate facing toward the first semiconductor layer, in a second region spanning a predetermined distance from a surface of the first semiconductor layer on the second side of the first semiconductor layer facing toward the semiconductor substrate, in a third region spanning a predetermined distance from a surface of the first semiconductor layer on the first side of the first semiconductor layer facing toward the second semiconductor layer, and in a fourth region spanning a predetermined distance from a surface of the second semiconductor layer on the second side of the second semiconductor layer facing toward the first semiconductor layer.