SEMICONDUCTOR DEVICE, POWER CONVERSION APPARATUS, AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE

A semiconductor device according to the present disclosure includes: a gate electrode provided in a gate trench and provided so as to oppose a source region via a gate insulating film; a first bottom protection region of a second conductivity type provided below the gate insulating film; a plurality of first connection regions of the second conductivity type provided at a first interval in an extension direction of the gate trench and electrically connecting the first bottom protection region and a body region; a Schottky electrode provided in a Schottky trench; a second bottom protection region of the second conductivity type provided below the Schottky electrode; and a plurality of second connection regions of the second conductivity type provided at a second interval smaller than the first interval in an extension direction of the Schottky trench and electrically connecting the second bottom protection region and the body region.