PROCESSING METHOD FOR FLUORINATION OF FLUORINATION-TARGET COMPONENT FOR SEMICONDUCTOR FABRICATION EQUIPMENT, WHICH MINIMIZES GENERATION OF CONTAMINANT PARTICLES, AND FLUORINATED COMPONENT OBTAINED THEREBY

Disclosed are a processing method for fluorination of a fluorination-target component for semiconductor fabrication equipment, which may realize high density and high strength by fluorinating the fluorination-target component using a fluorinating gas excited into plasma, and at the same time, may si...

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Bibliographische Detailangaben
Hauptverfasser:	CHOI, Soyoung, JANG, Joohee, CHO, Sanghyun, Oh, Seungyoung, YU, Yoonjae, CHOI, Eunyoung
Format:	Patent
Sprache:	eng
Schlagworte:	CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	Disclosed are a processing method for fluorination of a fluorination-target component for semiconductor fabrication equipment, which may realize high density and high strength by fluorinating the fluorination-target component using a fluorinating gas excited into plasma, and at the same time, may significantly reduce plasma contaminant particles which are generated during formation of a fluoride coating, and a fluorinated component obtained by the method.