SEMICONDUCTOR DEVICE AND METHOD FORMING THE SAME

SEMICONDUCTOR DEVICE AND METHOD FORMING THE SAME

A semiconductor device, including: a substrate having a first conductive type, an epitaxial layer disposed on the substrate, a doped region disposed in the epitaxial layer, and a gate electrode disposed through the doped region and extending into the epitaxial layer. The epitaxial layer has the firs...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: LEE, Chia-Hao, IMAM, Syed-Sarwar
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A semiconductor device, including: a substrate having a first conductive type, an epitaxial layer disposed on the substrate, a doped region disposed in the epitaxial layer, and a gate electrode disposed through the doped region and extending into the epitaxial layer. The epitaxial layer has the first conductive type, and the doped region has a second conductive type different from the first conductive type. The gate electrode includes a first structure having a first dimension, and a second structure above the first structure. The second structure includes a main portion and a protruding portion below the main portion, wherein the main portion has a second dimension larger than the first dimension, and the protruding portion has the first dimension.