METHODS FOR SILICON CARBIDE GATE FORMATION

A method of forming a gate structure on a substrate with increased charge mobility. In some embodiments, the method may include depositing an amorphous carbon layer on a silicon carbide layer on the substrate to form a capping layer on the silicon carbide layer, annealing the silicon carbide layer a...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	ZHENG, Yi, PING, Er-Xuan
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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