METHODS FOR SILICON CARBIDE GATE FORMATION

A method of forming a gate structure on a substrate with increased charge mobility. In some embodiments, the method may include depositing an amorphous carbon layer on a silicon carbide layer on the substrate to form a capping layer on the silicon carbide layer, annealing the silicon carbide layer at a temperature of greater than approximately 1800° C., forming a hard mask on the silicon carbide layer by patterning the amorphous carbon layer, etching a trench structure of the gate structure into the silicon carbide layer using the hard mask, removing the hard mask to expose the silicon carbide layer, depositing a silicon dioxide layer on the silicon carbide layer using an ALD process, performing at least one interface treatment on the silicon dioxide layer, depositing a gate oxide layer of the gate structure on the silicon dioxide layer, and depositing a gate material on the gate oxide layer.