MICROWAVE INTEGRATED CIRCUITS INCLUDING GALLIUM-NITRIDE DEVICES ON SILICON

Various integrated circuits formed using gallium nitride and other materials are described. In one example, an integrated circuit includes a first integrated device formed over a first semiconductor structure in a first region of the integrated circuit, a second integrated device formed over a second semiconductor structure in a second region of the integrated circuit, and a passive component formed over a third region of the integrated circuit, between the first region and the second region. The third region comprises an insulating material, which can be glass in some cases. The insulating material extends through the semiconductor substrate and separates the semiconductor substrate between the first semiconductor structure and the second semiconductor structure.