CLEANING METHOD, RECORDING MEDIUM, AND SUBSTRATE PROCESSING APPARATUS
There is provided a technique that includes modifying a deposited film, which is formed on an inner surface of a reaction container, into a film including an oxide layer and a nitride layer by performing a cycle a predetermined number of times, the cycle including: (a) oxidizing the deposited film b...
Gespeichert in:
Hauptverfasser: | , , , , , , , |
---|---|
Format: | Patent |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
container_end_page | |
---|---|
container_issue | |
container_start_page | |
container_title | |
container_volume | |
creator | FUNAKI, Katsunori TAKESHIMA, Yuichiro ICHIMURA, Keita UEDA, Tatsushi TSUBOTA, Yasutoshi KISHIMOTO, Hiroki IGAWA, Hiroto YAMAKADO, Yuki |
description | There is provided a technique that includes modifying a deposited film, which is formed on an inner surface of a reaction container, into a film including an oxide layer and a nitride layer by performing a cycle a predetermined number of times, the cycle including: (a) oxidizing the deposited film by supplying an oxygen-containing gas into the reaction container and plasma-exciting the oxygen-containing gas; and (b) nitriding the deposited film by supplying a nitrogen-containing gas into the reaction container and plasma-exciting the nitrogen-containing gas. |
format | Patent |
fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US2023201889A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US2023201889A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US2023201889A13</originalsourceid><addsrcrecordid>eNrjZHB19nF19PP0c1fwdQ3x8HfRUQhydfYPcoGIuHiG-uooOPq5KASHOgWHBDmGuCoEBPk7uwYHgxQ4BgQ4AsVCg3kYWNMSc4pTeaE0N4Oym2uIs4duakF-fGpxQWJyal5qSXxosJGBkbGRgaGFhaWjoTFxqgAoUCz8</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>CLEANING METHOD, RECORDING MEDIUM, AND SUBSTRATE PROCESSING APPARATUS</title><source>esp@cenet</source><creator>FUNAKI, Katsunori ; TAKESHIMA, Yuichiro ; ICHIMURA, Keita ; UEDA, Tatsushi ; TSUBOTA, Yasutoshi ; KISHIMOTO, Hiroki ; IGAWA, Hiroto ; YAMAKADO, Yuki</creator><creatorcontrib>FUNAKI, Katsunori ; TAKESHIMA, Yuichiro ; ICHIMURA, Keita ; UEDA, Tatsushi ; TSUBOTA, Yasutoshi ; KISHIMOTO, Hiroki ; IGAWA, Hiroto ; YAMAKADO, Yuki</creatorcontrib><description>There is provided a technique that includes modifying a deposited film, which is formed on an inner surface of a reaction container, into a film including an oxide layer and a nitride layer by performing a cycle a predetermined number of times, the cycle including: (a) oxidizing the deposited film by supplying an oxygen-containing gas into the reaction container and plasma-exciting the oxygen-containing gas; and (b) nitriding the deposited film by supplying a nitrogen-containing gas into the reaction container and plasma-exciting the nitrogen-containing gas.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; CLEANING ; CLEANING IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; PERFORMING OPERATIONS ; PREVENTION OF FOULING IN GENERAL ; SEMICONDUCTOR DEVICES ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION ; TRANSPORTING</subject><creationdate>2023</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20230629&DB=EPODOC&CC=US&NR=2023201889A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76419</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20230629&DB=EPODOC&CC=US&NR=2023201889A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>FUNAKI, Katsunori</creatorcontrib><creatorcontrib>TAKESHIMA, Yuichiro</creatorcontrib><creatorcontrib>ICHIMURA, Keita</creatorcontrib><creatorcontrib>UEDA, Tatsushi</creatorcontrib><creatorcontrib>TSUBOTA, Yasutoshi</creatorcontrib><creatorcontrib>KISHIMOTO, Hiroki</creatorcontrib><creatorcontrib>IGAWA, Hiroto</creatorcontrib><creatorcontrib>YAMAKADO, Yuki</creatorcontrib><title>CLEANING METHOD, RECORDING MEDIUM, AND SUBSTRATE PROCESSING APPARATUS</title><description>There is provided a technique that includes modifying a deposited film, which is formed on an inner surface of a reaction container, into a film including an oxide layer and a nitride layer by performing a cycle a predetermined number of times, the cycle including: (a) oxidizing the deposited film by supplying an oxygen-containing gas into the reaction container and plasma-exciting the oxygen-containing gas; and (b) nitriding the deposited film by supplying a nitrogen-containing gas into the reaction container and plasma-exciting the nitrogen-containing gas.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>CLEANING</subject><subject>CLEANING IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>PERFORMING OPERATIONS</subject><subject>PREVENTION OF FOULING IN GENERAL</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><subject>TRANSPORTING</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2023</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZHB19nF19PP0c1fwdQ3x8HfRUQhydfYPcoGIuHiG-uooOPq5KASHOgWHBDmGuCoEBPk7uwYHgxQ4BgQ4AsVCg3kYWNMSc4pTeaE0N4Oym2uIs4duakF-fGpxQWJyal5qSXxosJGBkbGRgaGFhaWjoTFxqgAoUCz8</recordid><startdate>20230629</startdate><enddate>20230629</enddate><creator>FUNAKI, Katsunori</creator><creator>TAKESHIMA, Yuichiro</creator><creator>ICHIMURA, Keita</creator><creator>UEDA, Tatsushi</creator><creator>TSUBOTA, Yasutoshi</creator><creator>KISHIMOTO, Hiroki</creator><creator>IGAWA, Hiroto</creator><creator>YAMAKADO, Yuki</creator><scope>EVB</scope></search><sort><creationdate>20230629</creationdate><title>CLEANING METHOD, RECORDING MEDIUM, AND SUBSTRATE PROCESSING APPARATUS</title><author>FUNAKI, Katsunori ; TAKESHIMA, Yuichiro ; ICHIMURA, Keita ; UEDA, Tatsushi ; TSUBOTA, Yasutoshi ; KISHIMOTO, Hiroki ; IGAWA, Hiroto ; YAMAKADO, Yuki</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2023201889A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2023</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>CLEANING</topic><topic>CLEANING IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>PERFORMING OPERATIONS</topic><topic>PREVENTION OF FOULING IN GENERAL</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><topic>TRANSPORTING</topic><toplevel>online_resources</toplevel><creatorcontrib>FUNAKI, Katsunori</creatorcontrib><creatorcontrib>TAKESHIMA, Yuichiro</creatorcontrib><creatorcontrib>ICHIMURA, Keita</creatorcontrib><creatorcontrib>UEDA, Tatsushi</creatorcontrib><creatorcontrib>TSUBOTA, Yasutoshi</creatorcontrib><creatorcontrib>KISHIMOTO, Hiroki</creatorcontrib><creatorcontrib>IGAWA, Hiroto</creatorcontrib><creatorcontrib>YAMAKADO, Yuki</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>FUNAKI, Katsunori</au><au>TAKESHIMA, Yuichiro</au><au>ICHIMURA, Keita</au><au>UEDA, Tatsushi</au><au>TSUBOTA, Yasutoshi</au><au>KISHIMOTO, Hiroki</au><au>IGAWA, Hiroto</au><au>YAMAKADO, Yuki</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>CLEANING METHOD, RECORDING MEDIUM, AND SUBSTRATE PROCESSING APPARATUS</title><date>2023-06-29</date><risdate>2023</risdate><abstract>There is provided a technique that includes modifying a deposited film, which is formed on an inner surface of a reaction container, into a film including an oxide layer and a nitride layer by performing a cycle a predetermined number of times, the cycle including: (a) oxidizing the deposited film by supplying an oxygen-containing gas into the reaction container and plasma-exciting the oxygen-containing gas; and (b) nitriding the deposited film by supplying a nitrogen-containing gas into the reaction container and plasma-exciting the nitrogen-containing gas.</abstract><oa>free_for_read</oa></addata></record> |
fulltext | fulltext_linktorsrc |
identifier | |
ispartof | |
issn | |
language | eng |
recordid | cdi_epo_espacenet_US2023201889A1 |
source | esp@cenet |
subjects | BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY CLEANING CLEANING IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY PERFORMING OPERATIONS PREVENTION OF FOULING IN GENERAL SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION TRANSPORTING |
title | CLEANING METHOD, RECORDING MEDIUM, AND SUBSTRATE PROCESSING APPARATUS |
url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-08T01%3A05%3A07IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=FUNAKI,%20Katsunori&rft.date=2023-06-29&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS2023201889A1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |