CLEANING METHOD, RECORDING MEDIUM, AND SUBSTRATE PROCESSING APPARATUS

There is provided a technique that includes modifying a deposited film, which is formed on an inner surface of a reaction container, into a film including an oxide layer and a nitride layer by performing a cycle a predetermined number of times, the cycle including: (a) oxidizing the deposited film b...

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Bibliographische Detailangaben
Hauptverfasser:	FUNAKI, Katsunori, TAKESHIMA, Yuichiro, ICHIMURA, Keita, UEDA, Tatsushi, TSUBOTA, Yasutoshi, KISHIMOTO, Hiroki, IGAWA, Hiroto, YAMAKADO, Yuki
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY CLEANING CLEANING IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY PERFORMING OPERATIONS PREVENTION OF FOULING IN GENERAL SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION TRANSPORTING
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Beschreibung
Zusammenfassung:	There is provided a technique that includes modifying a deposited film, which is formed on an inner surface of a reaction container, into a film including an oxide layer and a nitride layer by performing a cycle a predetermined number of times, the cycle including: (a) oxidizing the deposited film by supplying an oxygen-containing gas into the reaction container and plasma-exciting the oxygen-containing gas; and (b) nitriding the deposited film by supplying a nitrogen-containing gas into the reaction container and plasma-exciting the nitrogen-containing gas.