THREE-DIMENSIONAL NON-VOLATILE MEMORY DEVICE WITH FILAMENT CONFINEMENT

THREE-DIMENSIONAL NON-VOLATILE MEMORY DEVICE WITH FILAMENT CONFINEMENT

A non-volatile memory device and method of making the same is provided. The memory device includes a first electrode, a first hard mask on the first electrode, a second electrode on the first hard mask, a second hard mask on the second electrode, and a third electrode on the second hard mask. A swit...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: TAN, SHYUE SENG, TOH, ENG HUAT, LOY, DESMOND JIA JUN
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A non-volatile memory device and method of making the same is provided. The memory device includes a first electrode, a first hard mask on the first electrode, a second electrode on the first hard mask, a second hard mask on the second electrode, and a third electrode on the second hard mask. A switching layer is over the electrode stack and the switching layer has a first portion conformal to the side surfaces of the electrode stack.