SEMICONDUCTOR DEVICE
A semiconductor device includes first conductive layers stacked in a first direction; a semiconductor film extending in the first direction; a first electrode film disposed between a corresponding one of the first conductive layers and the semiconductor film, and extending in a second direction; and...
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Format: | Patent |
Sprache: | eng |
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Zusammenfassung: | A semiconductor device includes first conductive layers stacked in a first direction; a semiconductor film extending in the first direction; a first electrode film disposed between a corresponding one of the first conductive layers and the semiconductor film, and extending in a second direction; and a first insulating film disposed between the first conductive layer and the first electrode film. The first insulating film includes a first portion extending along a first sidewall of the first electrode film; a second portion that extends from an upper end of the first portion in a third direction to extend along an upper surface of the first electrode film; and a third portion that extends from a lower end of the first portion in the third direction to extend along a lower surface of the first electrode film. |
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