REPLACEMENT DEEP VIA AND BURIED OR BACKSIDE POWER RAIL WITH BACKSIDE INTERCONNECT STRUCTURE

REPLACEMENT DEEP VIA AND BURIED OR BACKSIDE POWER RAIL WITH BACKSIDE INTERCONNECT STRUCTURE

An integrated circuit structure includes a device layer including a plurality of transistors, a first interconnect feature vertically extending through the device layer, and an interconnect structure below the device layer. The interconnect structure below the device layer includes at least a second...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Majhi, Prashant, Murthy, Anand
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:An integrated circuit structure includes a device layer including a plurality of transistors, a first interconnect feature vertically extending through the device layer, and an interconnect structure below the device layer. The interconnect structure below the device layer includes at least a second interconnect feature. In an example, the second interconnect feature is conjoined with the first interconnect feature. For example, the first and second interconnect features collectively form a continuous and monolithic body of conductive material.