FILL OF VIAS IN SINGLE AND DUAL DAMASCENE STRUCTURES USING SELF-ASSEMBLED MONOLAYER

FILL OF VIAS IN SINGLE AND DUAL DAMASCENE STRUCTURES USING SELF-ASSEMBLED MONOLAYER

Metallization interconnect structures, integrated circuit devices, and methods related to high aspect ratio interconnects are discussed. A self assembled monolayer is selectively formed on interlayer dielectric sidewalls of an opening that exposes an underlying metallization structure. A first metal...

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Bibliographische Detailangaben
Hauptverfasser: Jezewski, Christopher, Kobrinsky, Mauro, Clendenning, Scott B, Reshotko, Miriam, Chen, Jiun-Ruey, Plombon, John
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Zusammenfassung:Metallization interconnect structures, integrated circuit devices, and methods related to high aspect ratio interconnects are discussed. A self assembled monolayer is selectively formed on interlayer dielectric sidewalls of an opening that exposes an underlying metallization structure. A first metal is formed on the underlying metallization structure and within only a bottom portion of the self assembled monolayer. The exposed portion of the self assembled monolayer is removed and a second metal is formed over the first metal.