SEMICONDUCTOR DEVICE HAVING WORD LINE EMBEDDED IN GATE TRENCH

SEMICONDUCTOR DEVICE HAVING WORD LINE EMBEDDED IN GATE TRENCH

Disclosed herein is an apparatus that includes a semiconductor substrate having source/drain regions and a gate trench located between the source/drain regions; and a gate electrode embedded in the gate trench via a gate insulating film. The gate electrode includes a first polycrystalline silicon fi...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Fujimoto, Toshiyasu, Matsumoto, Yoshihiro
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:Disclosed herein is an apparatus that includes a semiconductor substrate having source/drain regions and a gate trench located between the source/drain regions; and a gate electrode embedded in the gate trench via a gate insulating film. The gate electrode includes a first polycrystalline silicon film located at a bottom of the gate trench and a metal film stacked on the first polycrystalline silicon film. The first polycrystalline silicon film is doped with boron.