INTEGRATED CIRCUIT DEVICE INCLUDING GATE CONTACT

An integrated circuit device includes: a substrate including a device area and a field area; active regions extending in a first direction in the device area; a first gate structure extending in a second direction intersecting the first direction in the device area and the field area; a second gate...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Park, Juhun, Bae, Deokhan, Lee, Yuri, Hong, Sooyeon, Jung, Yoonyoung
Format: Patent
Sprache:eng
Schlagworte:
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Beschreibung
Zusammenfassung:An integrated circuit device includes: a substrate including a device area and a field area; active regions extending in a first direction in the device area; a first gate structure extending in a second direction intersecting the first direction in the device area and the field area; a second gate structure spaced apart from the first gate structure in the first direction; a first gate contact disposed on the first gate structure in the device area; and a second gate contact disposed on the second gate structure in the field area, wherein the first gate contact and the second gate contact are disposed at a level lower than an upper end of the first gate structure, and wherein a first minimum width of the first gate contact and a second minimum width of the second gate contact are different from each other.