INTEGRATED CIRCUIT DEVICE INCLUDING GATE CONTACT
An integrated circuit device includes: a substrate including a device area and a field area; active regions extending in a first direction in the device area; a first gate structure extending in a second direction intersecting the first direction in the device area and the field area; a second gate...
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Format: | Patent |
Sprache: | eng |
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Zusammenfassung: | An integrated circuit device includes: a substrate including a device area and a field area; active regions extending in a first direction in the device area; a first gate structure extending in a second direction intersecting the first direction in the device area and the field area; a second gate structure spaced apart from the first gate structure in the first direction; a first gate contact disposed on the first gate structure in the device area; and a second gate contact disposed on the second gate structure in the field area, wherein the first gate contact and the second gate contact are disposed at a level lower than an upper end of the first gate structure, and wherein a first minimum width of the first gate contact and a second minimum width of the second gate contact are different from each other. |
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